Ad Astra Awards
Ad Astra Journal
Science library
White book
University rankings
Who's who
Publications
Theses and dissertations
Ad Astra association
 
Press releases
News
Events
Funding opportunities
 
Login
Registration
 
>> Românã
 
   
 

Lucian Pintilie

National Institute of Materials Physics, Magurele, Romania

Institution web page: http://www.infim.ro
Send email

Born: 1959

Interests: semiconductors, ferroelectrics

Details:
CURRICULUM VITAE

First name: Lucian

Family name: Pintilie

Date of birth: 30 of September 1959

Place of birth: BACAU, ROMANIA.

Nationality: Romanian

Marital status: married, 2 children.

Address:
Work: National Institute of Materials Physics, Bucharest-Magurele, P.O. Box MG - 7, 077125 ROMANIA, pintilie@infim.ro
Home: Alunis 10, Magurele, ROMANIA

Professional training:
1979-1984: Faculty of Physics, University of Bucharest. Speciality: Condensed matter physics. Graduated in 1984 with a diploma entitled "Pyroelectric materials for IR detection".
1995: Ph.D in Physics. The title of the thesis is “ Pyroelectric materials of perovskite type with improved figure of merit and their applications in the I.R. detection”.

Work-stages and grants:
1997, march-april: six week work stage at the Max Planck Institut fur MikrostrukturPhysik, Halle, Germany; electric and photoelectric characterization of ferroelectric thin films.
1997, november-december: six week work stage at the Max Planck Institut fur MikrostrukturPhysik, Halle, Germany; electric and photoelectric characterization of ferroelectric thin films.
2001, may-december: guest scientist at Institute for Crystal Growth, Berlin, Germany; trap investigation in SiC bulk crystals and epilayers using DLTS.
2002, march-august: guest scientist at Institute for Crystal Growth, Berlin, Germany; trap investigation in SiC bulk crystals and epilayers using DLTS.
2002-2003: one year NATO grant as experienced scientist at Department of Physics, University Do Minho, Braga Portugal (the grant is split in several periods); research in the field of ferroelectric thin films and ceramics
2003-2007: co-worker at MPI for Microstructure Physics, Halle, Germany; electric characterisation of ferroelectric thin and ultra-thin films

Professional activities:
1984-present: Scientific researcher at the National Institute of Materials Physics, Bucharest.
1997-2004: Head of the Semiconductor Physics Laboratory.
1995-present: member of the Romanian Society of Crystal Growth-Materials Science, affiliated to International Organisation of Crystal Growth.
2001-promoted senior researcher rank 1
1999-2004- co-director of the NATO Science for Peace project SfP-971970-INOWATE-“Integrated Optoelectronic Circuits for Infrared Wavelength Telecommunication”
1995-present: director of various projects in the frame of the national research programs (CORINT, RELANSIN, CERES, CEEX); Romanian Ministry of Research and Technology grant in 1996 and 1997 (two projects).
2008-appointed by competition, for a 4 year mandate, as General Director of the National Institute of Materials Physics, Bucharest-Magurele.

Experience:
1. Preparation of perovskite-type ceramics with ferroelectric properties (PZT, PLZT). That includes ceramic technique and hot pressing.
2. Characterisation of ferroelectric ceramics and crystals from the point of view of their electric, ferroelectric and thermal properties.
3. Manufacturing and characterisation of pyroelectric detectors and arrays.
4. Characterization and modelling of ferroelectric multilayers with composition gradient involving non-homogeneous distribution of poarization.
5. Characterisation of photoconductive thin films of AIVBVI and AIIBVI type. The studied materials are mainly PbS and CdS and the method used for preparation is the homogeneous precipitation from alkaline solution.
6. Investigation of trapping levels by Thermally Stimulated Current method (TSC), Optical Charging Spectroscopy (OCS) and Deep Level Transient Spectroscopy (DLTS). These methods can be applied on bulk materials, thin films or heterostructures, using various contact geometry and trap filling techniques. Determination of trap parameters using various experimental techniques.
7. Electric and photoelectric phenomena in semiconducting or ferroelectric thin films and complex ferroelectrc/semiconductor heterostructures. That includes investigation of photoconductive properties and photovoltaic effects.
8. Field effect in complex ferroelectric/photoconductor and dielectric/photoconductor heterostructures with properties in the detection of electromagnetic radiation.

Awards:
2000-Excellence Award in Research, National Agency for Research and Technology
2009-Academy award for Physics-Dragomir Hurmuzescu

Actual domains of interest:
Characterisation of thin films
Traps investigation and study of photoelectric properties in ferroelectric thin films, ferroelectric multilayers and ferroelectric-semiconductor heterostructures.
UV-VIS-IR detectors and optoelectronic devices.
Electric and photoelectric investigation of complex semiconductor structures (SIS, MOS, MIS, MFS, etc.).

Publications:
Author or co-author of over 100 scientific articles in Web of Science, with over 1000 citations (h=15 as to date).



Selected publications:
• Pintilie L, Dragoi C, Chu YH, et al. . Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitors . APPLIED PHYSICS LETTERS, 94, p. 232902 , 2009.


Back

   
© Ad Astra 2001-2013